unisonic technologies co., ltd mmbta06 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2009 unisonic technologies co., ltd qw-r206-041.d amplifier transistor ? features * collector-emitter voltage: v ceo =80v * collector dissipation: p d =350mw lead-free: mmbta06l halogen-free:mmbta06g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mmbta06-ae3-r mmbta06l-ae3-r MMBTA06G-AE3-R sot-23 e b c tape reel ? marking
mmbta06 npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r206-041,d ? absolute maximum ratings (ta=25c) parameter symbol ratings unit collector base voltage v cbo 80 v collector emitter voltage v ceo 80 v emitter base voltage v ebo 4 v collector current - continuous i c 500 ma 350 mw total device dissipation(note 2) derate above 25c p d 2.8 mw/c junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device oper ation is not implied. 2. device mounted on fr-4=1.61.60.06 in ? thermal data parameter symbol min typ max unit junction to ambient ja 357 c/w ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector emitter breakdown voltage (note 1) bv ceo i c =1.0ma, i b =0 80 v emitter base breakdown voltage bv ebo i e =100 a, i c =0 4 v collector cutoff current i ces v ce =60v, i b =0 0.1 a collector cutoff current i cbo v cb =80v, i e =0 0.1 a on characteristics v ce =1v , i c =10ma, 100 dc current gain h fe v ce =1v , i c =100ma, 100 collector emitter sa turation voltage v ce(sat) i c =100ma, i b =10ma 0.25 v base emitter on voltage v be(on) v ce =1v , i c =100ma, 1.2 v small-signal characteristics current gain bandwidth product (note2) f t v ce =2v, i c =10ma, f=100mhz 100 mhz note 1: pulse test: pw 300 s, duty cycle 2% 2: f t is defined as the frequency at wh ich ihfei extrapolates to unity.
mmbta06 npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r206-041,d ? switching time test circuits turn-on time turn-off time 5.0s +10v 0 t r =3.0ns v in 5.0f r b 100 -1.0v r l +40v v cc output c s 6.0pf 100 5.0s t r =3.0ns v in 5.0f r b 100 +v bb r l +40v v cc output c s < 6.0pf 100
mmbta06 npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r206-041,d ? typical characteristics current-gain bandwidth product, f t (mhz) capacitance, c (pf) time, t (ns) collector current, i c (ma) 0.5 40 1.0 2.0 3.0 10 20 50100200300 60 80 400 dc current gain 200 collector current, i c (ma) 5.0 30 500 100 -55 25 t j =125 v ce =1.0v 0.5 0 1.0 2.0 10 20 50 100200 0.2 1.0 on voltages 0.8 collector current, i c (ma) 5.0 500 0.4 v ce(sat) @i c /i b =10 t j =125 0.6 v be(sat) @i c /i b =10 v be(on) @v ce =1.0v
mmbta06 npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r206-041,d ? typical characteristics(cont.) collector-emitter voltage, v ce (v) temperature coefficient, r vb (mv/ ) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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